A MOSFET SPICE Model With Integrated Electro-Thermal Averaged Modeling, Aging, and Lifetime Estimation
نویسندگان
چکیده
Lifetime estimation of power semiconductor devices have been widely investigated to improve the reliability and reduce cost maintenance converters. However in most reported work, aging effect is not considered lifetime evaluation process due omission or limitation thermal cycle counting method. Additionally, electrical/thermal simulation are usually implemented different simulators/platforms, for same reason. Thus, tackle these problems, a concise but comprehensive MOSFET model that enables electro-thermal modeling, on LTspice® circuit simulator proposed this paper. The idea comes from fact that, on-state resistance R ds,on only temperature dependent, also accepted as device failure precursor. In other words, it carries critical information about instantaneous progress. Hence, co-simulation can be achieved by constructing electrical, thermal, sub-modules exclusively first, using , build linkages among them. Averaged modeling technique adopted ease establishing links three sub-modules, fast speed compared switched converter model. Behavioral models employed realize cycles counting, stress accumulation degradation evaluation. This paper demonstrates possible use single software monitor performances circuits, their simultaneously. High-stress cycling long-term random mission profiles applied verify correctness mimic 10-year load respectively. An accelerated trend observed profile simulation, which agreement with theory. Facilitated employment averaged method good simulation/analytical tool implement requires assessment.
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2021
ISSN: ['2169-3536']
DOI: https://doi.org/10.1109/access.2020.3047110